Titanium disilicide

Titanium disilicide^[1]
Names
	IUPAC name Titanium disilicide
	Other names Titanium silicide
Identifiers
CAS Number	12039-83-7 ;
3D model (JSmol)	Interactive image;
ECHA InfoCard	100.031.719
EC Number	234-904-3;
PubChem CID	6336889;
CompTox Dashboard (EPA)	DTXSID70894998 ;
	InChI InChI=1S/2Si.Ti Key: DFJQEGUNXWZVAH-UHFFFAOYSA-N;
	SMILES [Si]=[Ti]=[Si];
Properties
Chemical formula	TiSi2
Molar mass	104.038 g/mol
Appearance	black orthorhombic crystals
Density	4.02 g/cm3
Melting point	1,470 °C (2,680 °F; 1,740 K)
Solubility in water	insoluble
Solubility	soluble in HF
Hazards
	GHS labelling:
Pictograms
Signal word	Warning
Hazard statements	H228, H315, H319, H335
Precautionary statements	P210, P240, P241, P261, P264, P271, P280, P302+P352, P304+P340, P305+P351+P338, P312, P321, P332+P313, P337+P313, P362, P370+P378, P403+P233, P405, P501
Safety data sheet (SDS)	[1]
Related compounds
Other cations	Zirconium disilicide; Hafnium disilicide
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). verify (what is ?) Infobox references

Titanium disilicide (Ti Si₂) is an inorganic chemical compound of titanium and silicon.

Preparation

Titanium disilicide can be obtained from the reaction between titanium or titanium hydride with silicon.^[2]

Ti + 2 Si → TiSi₂

It is also possible to prepare it aluminothermically by the ignition of aluminium powder, sulfur, silicon dioxide, and titanium dioxide or potassium hexafluorotitanate, K₂TiF₆, by electrolysis of a melt of potassium hexafluorotitanate and titanium dioxide, or by reaction of titanium with silicon tetrachloride.^[2]

Another method is the reaction of titanium tetrachloride with silane, dichlorosilane or silicon.^[3]

TiCl₄ + 2 SiH₄ → TiSi₂ + 4 HCl + 2 H₂

TiCl₄ + 2 SiH₂Cl₂ + 2 H₂ → TiSi₂ + 8 HCl

TiCl₄ + 3 Si → TiSi₂ + SiCl₄

Uses

Titanium silicide is used in the semiconductor industry. It is typically grown by means of salicide technology over silicon and polysilicon lines to reduce the sheet resistance of local transistors connections. In the microelectronic industry it is typically used in the C54 phase.

References

^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, Florida: CRC Press, pp. 4–91, ISBN 0-8493-0594-2
^ ^a ^b Brauer, Georg (1978). Handbuch der Präparativen Anorganischen Chemie, Band II. Baudler, Marianne (3rd ed.). Stuttgart: Enke. p. 1389. ISBN 978-3-432-87813-3. OCLC 310719490.
^ Pierson, Hugh O. (1999). Handbook of Chemical Vapor Deposition : Principles, Technology, and Applications (2nd ed.). Norwich, N.Y.: Noyes Publications. p. 331. ISBN 1-59124-030-1. OCLC 49708617.

[hand-1] Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, Florida: CRC Press, pp. 4–91, ISBN 0-8493-0594-2

[brauer-2] Brauer, Georg (1978). Handbuch der Präparativen Anorganischen Chemie, Band II. Baudler, Marianne (3rd ed.). Stuttgart: Enke. p. 1389. ISBN 978-3-432-87813-3. OCLC 310719490.

[3] Pierson, Hugh O. (1999). Handbook of Chemical Vapor Deposition : Principles, Technology, and Applications (2nd ed.). Norwich, N.Y.: Noyes Publications. p. 331. ISBN 1-59124-030-1. OCLC 49708617.

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