350 nm process

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The 350 nanometer process (350 nm process) is a level of semiconductor process technology that was reached in the 1995–1996 timeframe by leading semiconductor companies like Intel and IBM.

Examples

SGS-Thomson 5LM^[1]

Products featuring 350 nm manufacturing process

MTI VR4300i (1995), used in the Nintendo 64 game console.
Intel Pentium (P54CS, 1995), Pentium Pro (1995) and initial Pentium II CPUs (Klamath, 1997).
AMD K5 (1996) and original AMD K6 (Model 6, 1997) CPUs.
МЦСТ-R150 (2001).
Parallax Propeller (2006), 8 core microcontroller.^[2]
Atmel ATmega328, used in the Arduino UNO.^[3]^[4]
Nvidia RIVA 128 (1997) GPU

References

^ RIVA 128 gains support as preferred Direct3D developer platform press release, Nvidia, accessed December 3, 2023.
^ "Propeller I semiconductor process technology? Is it 350nm or 180nm?". Parallax Forums. Archived from the original on 2012-07-10. Retrieved 2015-09-13.
^ Petryk, Dmytro; Dyka, Zoya (2018). "Optical Fault Injections: a Setup Comparison". S2CID 198917285. {{cite journal}}: Cite journal requires |journal= (help)
^ Guillen, Oscar; Gruber, Michael; De Santis, Fabrizio (2017). "Low-Cost Setup for Localized Semi-invasive Optical Fault Injection Attacks: How Low Can We Go?". Constructive Side-Channel Analysis and Secure Design. Lecture Notes in Computer Science. Vol. 10348. pp. 207–222. doi:10.1007/978-3-319-64647-3_13. ISBN 978-3-319-64646-6.

Preceded by 600 nm	CMOS manufacturing processes	Succeeded by 250 nm

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[NVRIVA128D3Dpressrelease-1] RIVA 128 gains support as preferred Direct3D developer platform press release, Nvidia, accessed December 3, 2023.

[2] "Propeller I semiconductor process technology? Is it 350nm or 180nm?". Parallax Forums. Archived from the original on 2012-07-10. Retrieved 2015-09-13.

[3] Petryk, Dmytro; Dyka, Zoya (2018). "Optical Fault Injections: a Setup Comparison". S2CID 198917285. {{cite journal}}: Cite journal requires |journal= (help)

[4] Guillen, Oscar; Gruber, Michael; De Santis, Fabrizio (2017). "Low-Cost Setup for Localized Semi-invasive Optical Fault Injection Attacks: How Low Can We Go?". Constructive Side-Channel Analysis and Secure Design. Lecture Notes in Computer Science. Vol. 10348. pp. 207–222. doi:10.1007/978-3-319-64647-3_13. ISBN 978-3-319-64646-6.

[1]

Semiconductor device fabrication

MOSFET scaling (process nodes)
020 μm – 1968 010 μm – 1971 006 μm – 1974 003 μm – 1977 1.5 μm – 1981 001 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2025
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
v t e