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English: For different EUV wavelengths, the angular dependence of the reflectance from the EUV mask multilayer is different,[1][2] resulting in effectively different pupils. Source-mask optimization would exclude portions of these pupils,[3] leading to different results for different wavelengths. Both 13.4 nm and 13.5 nm are used in EUV exposure of resists, since they are well within the 2% bandwidth. The angular dependence of reflectance with off-axis central angle results in nonuniform distribution across the pupil.[4] |
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| Author | Guiding light |
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| 2019-07-20 22:18:40 | 611 × 327 | Guiding light | Uploading a self-made file using [[Wikipedia:File_Upload_Wizard|File Upload Wizard]] |
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- ↑ N Davydova et al., Proc. SPIE 8166, 816624 (2011).
- ↑ R. Chao et al., Measurement and characterization of EUV mask performance at high-NA, EECS Department, Univ. of California, Berkeley Technical Report No. UCB/EECS-2013-56, 5/10/2013, Figure 5.
- ↑ X. Liu et al., Proc. SPIE 9048, 9040Q (2014).
- ↑ J. Ruoff, Proc. SPIE 7823, 78231N (2010).
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
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| current | 16:27, 20 August 2019 | | 611 × 327 (85 KB) | Dave louis john | Transferred from en.wikipedia (MTC!) (1.1.0) |
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